thumbnail image
broken image
broken image
  • HOME
  • Competitive Advantage
  • Industry
  • Line Card
  • Retail
  • News Releases
  • Contact Us
  • Contact
  • …  
    • HOME
    • Competitive Advantage
    • Industry
    • Line Card
    • Retail
    • News Releases
    • Contact Us
    • Contact
繁體
broken image
broken image
  • HOME
  • Competitive Advantage
  • Industry
  • Line Card
  • Retail
  • News Releases
  • Contact Us
  • Contact
  • …  
    • HOME
    • Competitive Advantage
    • Industry
    • Line Card
    • Retail
    • News Releases
    • Contact Us
    • Contact
繁體
broken image
Go Back
UnitedSiC

UnitedSiC

SIC FET, SIC JFET, SIC SCHOTTKY DIODES
More Details

DESCRIPTION
The UnitedSiC UJ4C and UJ4SC, UF3C and UF3SC series of silicon carbide FETs are based on a unique cascode configuration, where a high performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET to produce the only standard gate drive SiC device in the market today. The UJ4C & UJ3C series are built for “ease of use” and the perfect solution when upgrading from an existing silicon-based device. The UJ4SC & UF3SC series provides faster switching speed and lower switching losses, and available in standard thru-hole (including Kelvin) and surface mount package options.

UnitedSiC debuted its first SiC FET device selection tool, the FET-Jet Calculator. The on-line tool helps power designers evaluate UnitedSiC devices in a variety of circuit topologies and focus in on the most promising solutions to make design decisions quickly and confidently. In addition, 9 new 750V Gen 4 devices were introduced, including the industry’s lowest RDS(on) SiC FET specified at 6mohms, half the value of its nearest competitor. On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.

STRONG FUTURE FOR SiC
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters. As a result, these SiC devices are enabling our customers to achieve superior end-product performance, assuring success in their end markets.

FEATURES
650V, 750V, 1200V, 1700V
Low RDS(on) options from 6mohm to 410mohm
Excellent body diode performance (Vf < 2V)
Drive with any Si and/or SiC gate drive voltage
Superior thermal performance
Full suite of Kelvin and industry standard packages 

*UnitedSiC Authorized Distributor

  • We are semiconductor distributor

    to fulfill diverse demand from customers
    in various product applications in great china.

    Learn More
  • Line Card

     
  • News Releases

    Sustainability should be a cultural value at your place of work
    June 20, 2023
    It Takes Courage to Innovate Differently
    April 12, 2023
    Cambridge GaN Devices Secures $19M to Scale Up For $50BN Power Semiconductor Device Market
    November 22, 2022
broken image

睿強實業股份有限公司
Zenicom Corporation

台北市內湖區新湖二路250巷8號3樓

3F, No. 8, Ln. 250, Xinhu 2nd Rd., Neihu Dist., Taipei City 114065, Taiwan

886-2-2793-0968

Copyright © Zenicom Corporation.

    Cookie Use
    We use cookies to ensure a smooth browsing experience. By continuing we assume you accept the use of cookies.
    Learn More